| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| 产品类别 | Power MOSFET |
| Configuration | Dual Dual Drain |
| Process Technology | TMOS |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 30 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3@N Channel|2.5@P Channel |
| Maximum Continuous Drain Current (A) | 6.5@N Channel|7@P Channel |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 30@10V@N Channel|33@10V@P Channel |
| Typical Gate Charge @ Vgs (nC) | 13@10V@N Channel|9.2@10V@P Channel |
| Typical Gate Charge @ 10V (nC) | 13@N Channel|9.2@P Channel |
| Typical Input Capacitance @ Vds (pF) | 255@15V@N Channel|520@15V@P Channel |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Fall Time (ns) | 3.5@N Channel|7@P Channel |
| Typical Rise Time (ns) | 2.5@N Channel|5.5@P Channel |
| Typical Turn-Off Delay Time (ns) | 14.5@N Channel|19@P Channel |
| Typical Turn-On Delay Time (ns) | 4.5@N Channel|7.5@P Channel |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Mounting | Surface Mount |
| Package Height | 1.55(Max) mm |
| Package Width | 4(Max) mm |
| Package Length | 5.1(Max) mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOP |
| Pin Count | 8 |
