NXP SemiconductorsPTVS12VP1UP,115瞬态电压抑制器 (TVS)
Diode TVS Single Uni-Dir 12V 600W 2-Pin CFP5 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Single | |
| Uni-Directional | |
| 1 | |
| 13.3 | |
| 19.9 | |
| 12 | |
| 30.2 | |
| 2.5 | |
| 1 | |
| 600 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Width | 2.7(Max) |
| Package Length | 4(Max) |
| PCB changed | 2 |
| Standard Package Name | SOD |
| Supplier Package | CFP5 |
| 2 |
NXP Semiconductors' PTVS12VP1UP,115 TVS diode is designed to protect electronic components and circuits from electrical overstress from overvoltage and electrostatic discharge. Its peak pulse power dissipation is 600 W. Its test current is 1 mA. This device's maximum clamping voltage is 19.9 V and minimum breakdown voltage is 13.3 V. Its maximum leakage current is 2.5 μA. This TVS diode has a minimum operating temperature of -55 °C and a maximum of 150 °C. This product will be shipped in tape and reel packaging for quick mounting and safe delivery.
设计 AI 驱动的医疗设备
阅读 Arrow 白皮书,掌握系统设计技巧、器件推荐与 AI 洞察,助力高效、安全打造医疗方案。

