NXP SemiconductorsPMBT4401,235通用双极型晶体管
Trans GP BJT NPN 40V 0.6A 250mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 60 | |
| 40 | |
| 6 | |
| 150 | |
| 0.95@15mA@150mA|1.2@50mA@500mA | |
| 0.4@15mA@150mA|0.75@50mA@500mA | |
| 0.6 | |
| 50 | |
| 20@0.1mA@1V|40@1mA@1V|80@10mA@1V|100@150mA@1V|40@500mA@2V | |
| 250 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.4(Max) |
| Package Length | 3(Max) |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Use this versatile NPN PMBT4401,235 GP BJT from NXP Semiconductors to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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