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onsemiNTLJD3119CTBGMOSFETs
Trans MOSFET N/P-CH 20V 3.8A/3.3A 6-Pin WDFN EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| N|P | |
| 2 | |
| 20 | |
| ±8 | |
| 1 | |
| -55 to 150 | |
| 3.8@N Channel|3.3@P Channel | |
| 100 | |
| 1 | |
| 65@4.5V@N Channel|100@4.5V@P Channel | |
| 3.7@4.5V@N Channel|5.5@4.5V@P Channel | |
| 1@N Channel|1.4@P Channel | |
| 0.6@N Channel|1@P Channel | |
| 3@N Channel|5.7@P Channel | |
| 271@10V@N Channel|531@10V@P Channel | |
| 43@10V@N Channel|56@10V@P Channel | |
| 0.4 | |
| 72@N Channel|91@P Channel | |
| 2300 | |
| 5.8@N Channel|19.1@P Channel | |
| 4.7@N Channel|13.2@P Channel | |
| 11.1@N Channel|13.7@P Channel | |
| 3.8@N Channel|5.2@P Channel | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 65@1.8V|46@2.5V|37@4.5V@N Channel|150@1.8V|101@2.5V|75@4.5V@P Channel | |
| 2.3 | |
| 18@N Channel|20@P Channel | |
| 177 | |
| 0.69@N Channel|0.75@P Channel | |
| 1.6@N Channel|1.7@P Channel | |
| 10.2@N Channel|16.2@P Channel | |
| 1 | |
| 0.7 | |
| 8 | |
| 3.8@N Channel|3.3@P Channel | |
| Mounting | Surface Mount |
| Package Height | 0.75(Max) mm |
| Package Width | 2 mm |
| Package Length | 2 mm |
| PCB changed | 6 |
| Standard Package Name | DFN |
| Supplier Package | WDFN EP |
| 6 | |
| Lead Shape | No Lead |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the NTLJD3119CTBG power MOSFET, developed by ON Semiconductor. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes tmos technology. This N|P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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