| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | Yes |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single Hex Collector | |
| 1 | |
| 40 | |
| 40 | |
| 6 | |
| 0.9@0.01A@1A | |
| 0.01@0.01A@0.1A|0.075@0.1A@1A|0.075@0.01A@1A|0.11@0.02A@2A|0.15@0.03A@3A|0.135@0.4A@4A | |
| 6 | |
| 200@10mA@2V|200@500mA@2V|200@1A@2V|200@2A@2V|200@3A@2V | |
| 1400 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.05 mm |
| Package Width | 1.65 mm |
| Package Length | 3.05 mm |
| PCB changed | 8 |
| Supplier Package | Chip FET |
| 8 | |
| Lead Shape | Flat |
ON Semiconductor has the solution to your circuit's high-voltage requirements with their NPN NSS40601CF8T1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1400 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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