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onsemiNSB1706DMW5T1G数字双极型晶体管
Trans Digital BJT NPN 50V 0.1A 385mW 5-Pin SC-88A T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Dual Common Emitter | |
| 50 | |
| 0.1 | |
| 80@5mA@10V | |
| 4.7 | |
| 0.1 | |
| 0.25@1mA@10mA | |
| 385 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1(Max) mm |
| Package Width | 1.25 mm |
| Package Length | 2 mm |
| PCB changed | 5 |
| Standard Package Name | SOT |
| Supplier Package | SC-88A |
| 5 | |
| Lead Shape | Gull-wing |
Apply the applications of a traditional bi polar junction transistor, in digital circuits with this npn and PNP NSB1706DMW5T1G digital transistor from ON Semiconductor, ideal for any digital signal processing circuit! This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual common emitter configuration.
| EDA / CAD Models |
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