onsemiNJVNJD2873T4G通用双极型晶体管
Trans GP BJT NPN 50V 2A 1680mW Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | Yes |
| PPAP | Yes |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 50 | |
| 50 | |
| 5 | |
| -65 to 175 | |
| 1.2@0.05A@1A | |
| 0.3@0.05mA@1mA | |
| 2 | |
| 100 | |
| 120@0.5A@2V|40@2A@2V | |
| 1680 | |
| -65 | |
| 175 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 2.38(Max) |
| Package Width | 6.22(Max) |
| Package Length | 6.73(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
ON Semiconductor has the solution to your circuit's high-voltage requirements with their NPN NJVNJD2873T4G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1680 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 175 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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