Top Searched
onsemiMUN5233DW1T1G数字双极型晶体管
Trans Digital BJT NPN 50V 0.1A 385mW 6-Pin SC-88 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Dual | |
| 50 | |
| 0.1 | |
| 80@5mA@10V | |
| 4.7 | |
| 0.1 | |
| 0.25@1mA@10mA | |
| 385 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.9 mm |
| Package Width | 1.25 mm |
| Package Length | 2 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SC-88 |
| 6 |
Thanks to ON Semiconductor, easily integrate NPN MUN5233DW1T1G digital transistors into digital signal processing circuits. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It is made in a dual configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
设计 AI 驱动的医疗设备
阅读 Arrow 白皮书，掌握系统设计技巧、器件推荐与 AI 洞察，助力高效、安全打造医疗方案。