50-75% 折扣
onsemiMUN5132T1G数字双极型晶体管
Trans Digital BJT PNP 50V 0.1A 310mW 3-Pin SC-70 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 50 | |
| 0.1 | |
| 15@5mA@10V | |
| 4.7 | |
| -55 to 150 | |
| 1 | |
| 0.25@1mA@10mA | |
| 310 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.85 mm |
| Package Width | 1.24 mm |
| Package Length | 2 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SC-70 |
| 3 | |
| Lead Shape | Gull-wing |
In addition to offering some of the benefits of traditional BJTs, the PNP MUN5132T1G digital transistor, developed by ON Semiconductor, can be used in digital signal processing circuits as well. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 15@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 310 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |
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