| 美国出口管制分类ECCN编码 | 3A991b.1.a. |
| 环保无铅 | Active |
| 美国海关商品代码 | 8542.32.00.71 |
| Cell Type | SLC NAND |
| Chip Density (bit) | 8G |
| Architecture | Sectored |
| Boot Block | No |
| Block Organization | Symmetrical |
| Address Width (bit) | 31 |
| Sector Size | 256Kbyte x 4096 |
| Page Size | 4Kbyte |
| Number of Bits/Word (bit) | 8 |
| Number of Words | 1G |
| Programmability | Yes |
| Timing Type | Asynchronous |
| Maximum Erase Time (s) | 0.01/Block |
| Maximum Programming Time (ms) | 0.6/Page |
| Interface Type | Parallel |
| Minimum Operating Supply Voltage (V) | 2.7 |
| Typical Operating Supply Voltage (V) | 3|3.3 |
| Maximum Operating Supply Voltage (V) | 3.6 |
| Operating Current (mA) | 35 |
| Program Current (mA) | 35 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 85 |
| Supplier Temperature Grade | Industrial |
| Command Compatible | No |
| ECC Support | Yes |
| Support of Page Mode | Yes |
