| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 60 | |
| 50 | |
| 7 | |
| 1@30mA@300mA | |
| 0.6@30mA@300mA | |
| 0.5 | |
| 120@150mA@10V|40@500mA@10V | |
| 200 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.09 mm |
| Package Width | 1.5 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SC-59 |
| 3 | |
| Lead Shape | Gull-wing |
Compared to other transistors, the NPN MSD602-RT1G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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