| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 45 | |
| 45 | |
| 7 | |
| 0.5@10mA@100mA | |
| 0.1 | |
| 100 | |
| 210@2mA@10V | |
| 150 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.85 mm |
| Package Width | 1.24 mm |
| Package Length | 2 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SC-70 |
| 3 | |
| Lead Shape | Gull-wing |
ON Semiconductor has the solution to your circuit's high-voltage requirements with their PNP MSB1218A-RT1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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