Diodes IncorporatedMMSTA05-7-F通用双极型晶体管
Trans GP BJT NPN 60V 0.5A 200mW 3-Pin SOT-323 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 60 | |
| 60 | |
| 4 | |
| 1.2@10mA@100mA | |
| 0.25@10mA@100mA | |
| 0.5 | |
| 100 | |
| 100@100mA@1V|100@10mA@1V | |
| 200 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.95 |
| Package Width | 1.3 |
| Package Length | 2.15 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-323 |
| 3 |
If your circuit's specifications require a device that can handle high levels of voltage, Diodes Zetex's NPN MMSTA05-7-F general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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