Diodes IncorporatedMMBTH10-7-F射频双极型晶体管
Trans RF BJT NPN 25V 0.05A 300mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 30 | |
| 25 | |
| 20 to 30 | |
| 0.5@400uA@4mA | |
| 3 | |
| 0.95(Typ)@4mA | |
| 0.05 | |
| 0.001 to 0.06 | |
| 100 | |
| 100 | |
| 60@4mA@10V | |
| 50 to 120 | |
| 417 | |
| 0.7 | |
| 300 | |
| 650(Min) | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.98 mm |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN MMBTH10-7-F GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 3 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 3 V.
| EDA / CAD Models |
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