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onsemiMMBTA92LT1G通用双极型晶体管
Trans GP BJT PNP 300V 0.5A 300mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 300 | |
| 300 | |
| 5 | |
| 0.9@2mA@20mA | |
| 0.5@2mA@20mA | |
| 0.5 | |
| 250 | |
| 25@1mA@10V|40@10mA@10V|25@30mA@10V | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.94 mm |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Use this versatile PNP MMBTA92LT1G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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