| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 40 | |
| 15 | |
| 4.5 | |
| -55 to 150 | |
| 0.85@1mA@10mA | |
| 0.25@1mA@10mA | |
| 0.2 | |
| 400 | |
| 40@10mA@1V|20@100mA@2V | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.94 mm |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
ON Semiconductor has the solution to your circuit's high-voltage requirements with their NPN MMBT2369LT1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 4.5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 15 V and a maximum emitter base voltage of 4.5 V.
| EDA / CAD Models |
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