Diodes IncorporatedMJD350-13通用双极型晶体管

Trans GP BJT PNP 300V 0.5A 1560mW 3-Pin(2+Tab) DPAK T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP MJD350-13 GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 3 V. Its maximum power dissipation is 1560 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 3 V.

A datasheet is only available for this product at this time.

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