| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 40 | |
| 25 | |
| 8 | |
| 2.5@1A@5A | |
| 0.3@50mA@500mA|0.75@200mA@2A|1.8@1A@5A | |
| 5 | |
| 100 | |
| 70@500mA@1V|45@2A@1V|10@5A@2V | |
| 1400 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 2.38(Max) mm |
| Package Width | 6.22(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
Implement this NPN MJD200RLG GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 8 V. Its maximum power dissipation is 1400 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 8 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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