Reduced Price
MagnaChip SemiconductorMDS5652URHMOSFETs
Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| ±20 | |
| 3 | |
| 7.5 | |
| 100 | |
| 1 | |
| 22@10V | |
| 6.1@4.5V|11.7@10V | |
| 11.7 | |
| 460@30V | |
| 2000 | |
| 10.6 | |
| 24.6 | |
| 17.4 | |
| 3.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.38 mm |
| Package Width | 3.9 mm |
| Package Length | 4.9 mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| 8 | |
| Lead Shape | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? MagnaChip Semiconductor's MDS5652URH power MOSFET can provide a solution. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with tmos technology.
| EDA / CAD Models |
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