Reduced Price
MagnaChip SemiconductorMDS1521URHMOSFETs
Trans MOSFET N-CH 30V 18.8A 8-Pin SOIC T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.7 | |
| 18.8 | |
| 100 | |
| 1 | |
| 4@10V | |
| 18.2@4.5V|38.3@10V | |
| 38.3 | |
| 2514@15V | |
| 2500 | |
| 14 | |
| 24 | |
| 39.2 | |
| 9.3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) mm |
| Package Width | 3.9 mm |
| Package Length | 4.9 mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| 8 | |
| Lead Shape | Gull-wing |
Amplify electronic signals and switch between them with the help of MagnaChip Semiconductor's MDS1521URH power MOSFET. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes tmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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