MagnaChip SemiconductorMDD1901RHMOSFETs
Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) DPAK T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 4 | |
| 40 | |
| 100 | |
| 1 | |
| 22@10V | |
| 75@10V | |
| 75 | |
| 3090@30V | |
| 70000 | |
| 15 | |
| 26 | |
| 69 | |
| 15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 2.39(Max) mm |
| Package Width | 6.1 mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
Amplify electronic signals and switch between them with the help of MagnaChip Semiconductor's MDD1901RH power MOSFET. Its maximum power dissipation is 70000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes tmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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