| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| High Speed | |
| Inverting | |
| 2 | |
| Dependent | |
| MOSFET | |
| 2 | |
| 31(Typ) | |
| 32(Typ) | |
| 36(Typ) | |
| CMOS|LSTTL | |
| 6.5 | |
| 18 | |
| 10.5(Typ) | |
| 1.58 | |
| 1.75 | |
| 1.5 | |
| 1000 | |
| -40 | |
| 85 | |
| Under Voltage Lockout | |
| No | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 4.95(Max) mm |
| Package Width | 7.11(Max) mm |
| Package Length | 10.16(Max) mm |
| PCB changed | 8 |
| Standard Package Name | DIP |
| Supplier Package | PDIP |
| 8 | |
| Lead Shape | Through Hole |
Change state in a high power transistor by implementing this MC33151PG power driver by ON Semiconductor. This device has a maximum propagation delay time of 100 ns and a maximum power dissipation of 1000 mW. Its maximum power dissipation is 1000 mW. This product comes in rail packaging to keep individual parts separated and protected. This device has a minimum operating supply voltage of 6.5 V and a maximum of 18 V. This gate driver has an operating temperature range of -40 °C to 85 °C.
| EDA / CAD Models |
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