| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 150 | |
| ±15 | |
| 44 | |
| 65@10V | |
| 175@10V | |
| 175 | |
| 13400@25V | |
| 298000 | |
| 17 | |
| 42 | |
| 50 | |
| 25 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 9.15(Max) |
| Package Width | 4.83(Max) |
| Package Length | 10.66(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 |
This IXTP44P15T power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 298000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with trenchp technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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