| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±15 | |
| 18 | |
| 120@10V | |
| 39@10V | |
| 39 | |
| 2100@25V | |
| 83000 | |
| 22 | |
| 26 | |
| 44 | |
| 19 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 9.15(Max) |
| Package Width | 4.83(Max) |
| Package Length | 10.66(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 |
Make an effective common gate amplifier using this IXTP18P10T power MOSFET from Ixys Corporation. Its maximum power dissipation is 83000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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