| 欧盟RoHS指令 | Compliant with Exemption |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | EA |
| Automotive | No |
| PPAP | No |
| 产品类别 | Power MOSFET |
| Process Technology | GigaMOS |
| Configuration | Single Dual Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 55 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 550 |
| Maximum Drain-Source Resistance (mOhm) | 1.3@10V |
| Typical Gate Charge @ Vgs (nC) | 595@10V |
| Typical Gate Charge @ 10V (nC) | 595 |
| Typical Input Capacitance @ Vds (pF) | 40@25V |
| Maximum Power Dissipation (mW) | 940000 |
| Typical Fall Time (ns) | 230 |
| Typical Rise Time (ns) | 40 |
| Typical Turn-Off Delay Time (ns) | 90 |
| Typical Turn-On Delay Time (ns) | 45 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Mounting | Screw |
| Package Width | 25.42(Max) |
| Package Length | 38.23(Max) |
| PCB changed | 4 |
| Standard Package Name | SOT |
| Supplier Package | SOT-227B |
| Pin Count | 4 |
