| Compliant | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±15 | |
| 4.5 | |
| 210 | |
| 200 | |
| 25 | |
| 7.5@10V | |
| 740@10V | |
| 740 | |
| 69500@25V | |
| 1040000 | |
| 55 | |
| 98 | |
| 165 | |
| 90 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 26.16(Max) |
| Package Width | 5.13(Max) |
| Package Length | 19.96(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-264AA |
| 3 |
Compared to traditional transistors, IXTK210P10T power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1040000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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