IXYSIXGT25N250IGBT 芯片

Trans IGBT Chip N-CH 2500V 60A 250W 3-Pin(2+Tab) TO-268

This powerful and secure IXGT25N250 IGBT transistor from Ixys Corporation will make sure your circuit works properly. It has a maximum collector emitter voltage of 2500 V. Its maximum power dissipation is 250000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

A datasheet is only available for this product at this time.

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