IXYSIXGH48N60B3D1IGBT 芯片

Trans IGBT Chip N-CH 600V 48A 300W 3-Pin(3+Tab) TO-247

Minimize the current at your gate with the IXGH48N60B3D1 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 300000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

A datasheet is only available for this product at this time.

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