| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±30 | |
| 44 | |
| 190@10V | |
| 198@10V | |
| 198 | |
| 1200@25V | |
| 1040000 | |
| 27 | |
| 22 | |
| 75 | |
| 28 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 26.16(Max) |
| Package Width | 5.13(Max) |
| Package Length | 19.96(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-264AA |
| 3 |
Make an effective common gate amplifier using this IXFK44N80P power MOSFET from Ixys Corporation. Its maximum power dissipation is 1200000 mW. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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