| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 26 | |
| 270@10V | |
| 72@10V | |
| 72 | |
| 4150@25V | |
| 460000 | |
| 21 | |
| 27 | |
| 75 | |
| 25 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 21.45(Max) mm |
| Package Width | 5.3(Max) mm |
| Package Length | 16.24(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247AD |
| 3 | |
| Lead Shape | Through Hole |
As an alternative to traditional transistors, the IXFH26N60P power MOSFET from Ixys Corporation can be used to both amplify and switch electronic signals. Its maximum power dissipation is 460000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
设计 AI 驱动的医疗设备
阅读 Arrow 白皮书，掌握系统设计技巧、器件推荐与 AI 洞察，助力高效、安全打造医疗方案。