| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 18 | |
| 400@10V | |
| 50@10V | |
| 50 | |
| 2500@25V | |
| 360000 | |
| 22 | |
| 22 | |
| 62 | |
| 21 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 21.46(Max) mm |
| Package Width | 5.3(Max) mm |
| Package Length | 16.26(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247AD |
| 3 |
This IXFH18N60P power MOSFET from Ixys Corporation can be used for amplification in your circuit. Its maximum power dissipation is 360000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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