| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| EA | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| HiperFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±20 | |
| 15 | |
| 600@10V | |
| 90@10V | |
| 90 | |
| 4300@25V | |
| 300000 | |
| 16 | |
| 27 | |
| 53 | |
| 18 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 21.46(Max) |
| Package Width | 5.3(Max) |
| Package Length | 16.26(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247AD |
| 3 |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IXFH15N80Q power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 300000 mW. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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