| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Low Side | |
| Inverting | |
| 2 | |
| IGBT|MOSFET | |
| 2 | |
| 15 | |
| 15 | |
| 60 | |
| CMOS|TTL | |
| 4.5 | |
| 35 | |
| 3 | |
| 0.8(Max) | |
| 3(Min) | |
| 2 | |
| 1.5|2.5 | |
| -40 | |
| 125 | |
| Extended | |
| Tube | |
| Mounting | Surface Mount |
| Package Height | 1.25(Min) |
| Package Width | 4(Max) |
| Package Length | 5(Max) |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| 8 | |
| Lead Shape | Gull-wing |
Switch between states in a high power transistor by using this IXDI602SIA power driver developed by Ixys Corporation. This device has a maximum propagation delay time of 60 ns. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device has a minimum operating supply voltage of 4.5 V and a maximum of 35 V. This gate driver has an operating temperature range of -40 °C to 125 °C.
| EDA / CAD Models |
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