| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.3um | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 9 | |
| 100 | |
| 25 | |
| 400@10V | |
| 43(Max)@10V | |
| 43(Max) | |
| 23(Max) | |
| 7(Max) | |
| 1.1 | |
| 800@25V | |
| 76@25V | |
| 2 | |
| 240 | |
| 74000 | |
| 20 | |
| 28 | |
| 39 | |
| 9.4 | |
| -55 | |
| 150 | |
| 20 | |
| 36 | |
| 170 | |
| 2 | |
| Mounting | Through Hole |
| Package Height | 9.01(Max) mm |
| Package Width | 4.65(Max) mm |
| Package Length | 10.51(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the IRF630PBF power MOSFET. Its maximum power dissipation is 74000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with HEXFET technology.
| EDA / CAD Models |
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