| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | Yes |
| PPAP | Unknown |
| 产品类别 | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 100 |
| Maximum Gate Threshold Voltage (V) | 2.1 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 100@4.5V |
| Packaging | Wafer |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 16@4.5V |
| Package Height | 0.22 mm |
| Package Width | 1.8 mm |
| Package Length | 2.5 mm |
| PCB changed | 3 |
| Supplier Package | Chip |
| Pin Count | 3 |