| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.55 |
| Automotive | No |
| PPAP | No |
| 产品类别 | Power MOSFET |
| Material | SiC |
| Configuration | Single Dual Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 20 |
| Maximum Gate Threshold Voltage (V) | 5.2 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Maximum Continuous Drain Current (A) | 98 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 320 |
| Maximum Drain-Source Resistance (mOhm) | 26.9@18V |
| Typical Gate Charge @ Vgs (nC) | 109@18V |
| Typical Gate to Drain Charge (nC) | 21.8 |
| Typical Gate to Source Charge (nC) | 27.1 |
| Typical Input Capacitance @ Vds (pF) | 3460@800V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 23@800V |
| Minimum Gate Threshold Voltage (V) | 3.5 |
| Typical Output Capacitance (pF) | 159 |
| Maximum Power Dissipation (mW) | 375000 |
| Typical Fall Time (ns) | 14.8 |
| Typical Rise Time (ns) | 13.7 |
| Typical Turn-Off Delay Time (ns) | 43.8 |
| Typical Turn-On Delay Time (ns) | 36 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Tube |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 19@18V|23.7@15V |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 213 |
| Typical Diode Forward Voltage (V) | 3.8 |
| Typical Gate Plateau Voltage (V) | 6.3 |
| Maximum Diode Forward Voltage (V) | 5 |
| Typical Gate Threshold Voltage (V) | 4.2 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Mounting | Through Hole |
| Package Height | 21 |
| Package Width | 5 |
| Package Length | 15.8 |
| PCB changed | 4 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| Pin Count | 4 |
