| 欧盟RoHS指令 | Compliant with Exemption |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | COMPONENTS |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| 产品类别 | Power MOSFET |
| Material | Si |
| Configuration | Single Quad Drain Triple Source |
| Process Technology | 0.5um |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 30 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 20 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 2.2@10V |
| Typical Gate Charge @ Vgs (nC) | 24@4.5V|54@10V |
| Typical Gate Charge @ 10V (nC) | 54 |
| Typical Gate to Drain Charge (nC) | 5.6 |
| Typical Gate to Source Charge (nC) | 11 |
| Typical Reverse Recovery Charge (nC) | 25 |
| Typical Input Capacitance @ Vds (pF) | 3630@15V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 110@15V |
| Minimum Gate Threshold Voltage (V) | 1.2 |
| Typical Output Capacitance (pF) | 1345 |
| Maximum Power Dissipation (mW) | 2300 |
| Typical Fall Time (ns) | 5.7 |
| Typical Rise Time (ns) | 6.8 |
| Typical Turn-Off Delay Time (ns) | 36 |
| Typical Turn-On Delay Time (ns) | 14 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 200 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Reverse Recovery Time (ns) | 45 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Gate Threshold Voltage (V) | 1.7 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 3.3 mm |
| Package Length | 3.3 mm |
| PCB changed | 8 |
| Standard Package Name | QFN |
| Supplier Package | PQFN EP |
| Pin Count | 8 |
| Lead Shape | No Lead |
