Diodes IncorporatedDSS4160V-7通用双极型晶体管
Trans GP BJT NPN 60V 1A 600mW 6-Pin SOT-563 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single Quad Collector | |
| 1 | |
| 80 | |
| 60 | |
| 5 | |
| 1.1@50mA@1A | |
| 0.11@1mA@100mA|0.14@50mA@500mA|0.25@100mA@1A | |
| 1 | |
| 100 | |
| 250@1mA@5V|200@500mA@5V|100@1A@5V | |
| 600 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.6(Max) mm |
| Package Width | 1.2 mm |
| Package Length | 1.6 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SOT-563 |
| 6 | |
| Lead Shape | Flat |
Compared to other transistors, the NPN DSS4160V-7 general purpose bipolar junction transistor, developed by Diodes Zetex, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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