| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| 产品类别 | Power MOSFET |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 20 |
| Maximum Gate-Source Voltage (V) | ±12 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 4.5 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 50@4.5V |
| Typical Gate Charge @ Vgs (nC) | 9.1@4.5V |
| Typical Gate to Drain Charge (nC) | 1.9 |
| Typical Gate to Source Charge (nC) | 1.2 |
| Typical Input Capacitance @ Vds (pF) | 752@15V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 78@15V |
| Minimum Gate Threshold Voltage (V) | 0.4 |
| Typical Output Capacitance (pF) | 87 |
| Maximum Power Dissipation (mW) | 1540 |
| Typical Fall Time (ns) | 20 |
| Typical Rise Time (ns) | 8.3 |
| Typical Turn-Off Delay Time (ns) | 47 |
| Typical Turn-On Delay Time (ns) | 5.4 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 40@4.5V|55@2.5V|75@1.8V|95@1.5V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.54 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 25 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 82 |
| Typical Diode Forward Voltage (V) | 0.75 |
| Typical Gate Plateau Voltage (V) | 1.6 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Maximum Positive Gate-Source Voltage (V) | 12 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 4.5 |
| Mounting | Surface Mount |
| Package Height | 0.56 mm |
| Package Width | 2 mm |
| Package Length | 2 mm |
| PCB changed | 6 |
| Standard Package Name | DFN |
| Supplier Package | UDFN EP |
| Pin Count | 6 |
| Lead Shape | No Lead |
