| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 3.2 | |
| 100 | |
| 100 | |
| 1 | |
| 6.6@10V | |
| 38@10V | |
| 38 | |
| 5.8 | |
| 3060@40V | |
| 217000 | |
| 5 | |
| 15 | |
| 39 | |
| 21 | |
| -55 | |
| 175 | |
| Tube | |
| 2.6 | |
| Mounting | Through Hole |
| Package Height | 9.25(Max) |
| Package Width | 4.7(Max) |
| Package Length | 10.36(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 |
Increase the current or voltage in your circuit with this CSD19501KCS power MOSFET from Texas Instruments. Its maximum power dissipation is 217000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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