| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 1.8 | |
| 60 | |
| 100 | |
| 1 | |
| 4.2@10V | |
| 13@4.5V|27@10V | |
| 27 | |
| 2.8 | |
| 1780@15V | |
| 3000 | |
| 2 | |
| 12 | |
| 18 | |
| 3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.4 | |
| Mounting | Surface Mount |
| Package Height | 1 |
| Package Width | 5.75 |
| Package Length | 4.9 |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | VSONP EP |
| 8 |
Thanks to Texas Instruments, both your amplification and switching needs can be taken care of with one component: the CSD17577Q5AT power MOSFET. Its maximum power dissipation is 3000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes nexfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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