| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8542.39.00.01 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| 16 | |
| 22 | |
| 4.5@10V | |
| 6.7@4.5V | |
| 990@12.5V | |
| 3100 | |
| 10.8 | |
| 25 | |
| 11 | |
| 11.3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 6 mm |
| Package Length | 5 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | SON EP |
| 8 |
This CSD16408Q5C power MOSFET from Texas Instruments can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 3100 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes nexfet technology.
| EDA / CAD Models |
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