| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | Yes |
| PPAP | Unknown |
| 产品类别 | Power MOSFET |
| Material | Si |
| Configuration | Single Dual Drain |
| Process Technology | DMOS |
| Channel Mode | Depletion |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 250 |
| Maximum Gate-Source Voltage (V) | ±15 |
| Operating Junction Temperature (°C) | 125 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Drain-Source Resistance (mOhm) | 4000@0V |
| Typical Input Capacitance @ Vds (pF) | 327@25V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 27@25V |
| Typical Output Capacitance (pF) | 51 |
| Maximum Power Dissipation (mW) | 1100 |
| Typical Fall Time (ns) | 70 |
| Typical Rise Time (ns) | 8 |
| Typical Turn-Off Delay Time (ns) | 17 |
| Typical Turn-On Delay Time (ns) | 23 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 125 |
| Packaging | Tape and Reel |
| Maximum Positive Gate-Source Voltage (V) | 15 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.1 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 0.6 |
| Typical Diode Forward Voltage (V) | 0.6 |
| Maximum Diode Forward Voltage (V) | 1.8 |
| Mounting | Surface Mount |
| Package Height | 1.6(Max) mm |
| Package Width | 2.59(Max) mm |
| Package Length | 4.6(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-89 |
| Pin Count | 4 |
| Lead Shape | Flat |
