| 环保无铅 | Active |
| 美国海关商品代码 | 8541.10.00.80 |
| Automotive | Yes |
| PPAP | No |
| 产品类别 | Power MOSFET |
| Material | SiC |
| Configuration | Quad |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 4 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 19 |
| Operating Junction Temperature (°C) | -40 to 175 |
| Maximum Continuous Drain Current (A) | 100 |
| Maximum Drain-Source Resistance (mOhm) | 14.9@15V |
| Typical Gate Charge @ Vgs (nC) | 405@15V |
| Typical Input Capacitance @ Vds (pF) | 10100@800V |
| Maximum Power Dissipation (mW) | 292000(Typ) |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 125 |
| Supplier Temperature Grade | Industrial |
| Mounting | Screw |
| Package Height | 12 |
| Package Width | 56.7 |
| Package Length | 62.8 |
| PCB changed | 34 |
| Pin Count | 34 |
