| 欧盟RoHS指令 | Compliant with Exemption |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| 产品类别 | Power MOSFET |
| Material | SiC |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 19 |
| Maximum Gate Threshold Voltage (V) | 3.6 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 7.6 |
| Maximum Gate-Source Leakage Current (nA) | 250 |
| Maximum IDSS (uA) | 50 |
| Maximum Drain-Source Resistance (mOhm) | 455@15V |
| Typical Gate Charge @ Vgs (nC) | 19@15V |
| Typical Gate to Drain Charge (nC) | 9 |
| Typical Gate to Source Charge (nC) | 5 |
| Typical Reverse Recovery Charge (nC) | 67 |
| Typical Input Capacitance @ Vds (pF) | 345@1000V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 3.4@1000V |
| Minimum Gate Threshold Voltage (V) | 1.8 |
| Typical Output Capacitance (pF) | 20 |
| Maximum Power Dissipation (mW) | 50000 |
| Typical Fall Time (ns) | 17 |
| Typical Rise Time (ns) | 16 |
| Typical Turn-Off Delay Time (ns) | 14 |
| Typical Turn-On Delay Time (ns) | 25 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Temperature Grade | Industrial |
| Packaging | Tube |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 350@15V |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 20 |
| Typical Diode Forward Voltage (V) | 4.5 |
| Typical Gate Plateau Voltage (V) | 6.8 |
| Typical Reverse Recovery Time (ns) | 26 |
| Typical Gate Threshold Voltage (V) | 2.5 |
| Maximum Positive Gate-Source Voltage (V) | 19 |
| Mounting | Through Hole |
| Package Height | 21.05(Max) mm |
| Package Width | 5.21(Max) mm |
| Package Length | 16.13(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
