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STMicroelectronicsBZW50-33B瞬态电压抑制器 (TVS)
Diode TVS Single Bi-Dir 33V 5KW 2-Pin Case R-6 Ammo
| Compliant with Exemption | |
| EAR99 | |
| LTB | |
| 8541.10.00.80 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Single | |
| Bi-Directional | |
| 1 | |
| 36.6 | |
| 59 | |
| 33 | |
| 85 | |
| 5 | |
| 1 | |
| 5000 | |
| -55 | |
| 175 | |
| Industrial | |
| Ammo | |
| Diameter | 9.1(Max) |
| Mounting | Through Hole |
| Package Length | 9.1(Max) |
| PCB changed | 2 |
| Supplier Package | Case R-6 |
| 2 | |
| Lead Shape | Through Hole |
Protect vulnerable electronic circuits against overvoltages by equipping your device with this BZW50-33B TVS diode from STMicroelectronics. Its test current is 1 mA. Its peak pulse power dissipation is 5000 W. This device's maximum clamping voltage is 76 V and minimum breakdown voltage is 36.6 V. Its maximum leakage current is 5 μA. This TVS diode has a minimum operating temperature of -65 °C and a maximum of 175 °C.
| EDA / CAD Models |
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