onsemiBSP52T1G达林顿双极型晶体管
Trans Darlington NPN 80V 1A 1250mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single Dual Collector | |
| 1 | |
| 80 | |
| 90 | |
| 5 | |
| 1.9@0.5mA@500mA | |
| 1 | |
| 1.3@0.5mA@500mA | |
| 1000@150mA@10V|2000@500mA@10V | |
| 1250 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.57 mm |
| Package Width | 3.5 mm |
| Package Length | 6.5 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| 4 | |
| Lead Shape | Gull-wing |
Compared to other transistors, the NPN BSP52T1G Darlington transistor from ON Semiconductor can provide you with a higher current gain value. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 1.9@0.5mA@500mA V. This product's maximum continuous DC collector current is 1 A, while its minimum DC current gain is 1000@150mA@10 V|2000@500mA@10V. It has a maximum collector emitter saturation voltage of 1.3@0.5mA@500mA V. Its maximum power dissipation is 1250 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
设计 AI 驱动的医疗设备
阅读 Arrow 白皮书，掌握系统设计技巧、器件推荐与 AI 洞察，助力高效、安全打造医疗方案。