Insulated Gate Bipolar Transistors (IGBTs)
The Bourns® IGBT discrete BID series combines technology from a MOS gate and a bipolar transistor, creating the right component for high voltage and high current applications. This device uses advanced Trench-Gate Field-Stop technology providing greater control of the dynamic characteristics while resulting in a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure increases the robustness of the device and gives a lower RTH. The Bourns® IGBT solution is suitable for SMPS, UPS and PFC applications.
New in POWrFuse High-Power Fuses:
Bourns Model BID Series Insulated Gate Bipolar Transistors (IGBTs) New Product Brief
Bourns Model BID Series IGBT Product Guide
The Benefits of IGBT Switching Protection Using TVS and PTVS Diodes Application Note
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| ±30 | |
| 600 | |
| 1.5 | |
| 10 | |
| 0.4 | |
| 82 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 2.3 |
| Package Width | 6.1 |
| Package Length | 6.6 |
| PCB changed | 2 |
| Tab | Tab |
| Supplier Package | DPAK |
| 3 |
| EDA / CAD Models |
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