onsemiBDV64BG达林顿双极型晶体管
Trans Darlington PNP 100V 10A 125000mW 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 1 | |
| 100 | |
| 100 | |
| 5 | |
| 10 | |
| 400 | |
| 2@0.02A@5A | |
| 1000@5A@4V | |
| 125000 | |
| -65 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 21.08(Max) mm |
| Package Width | 5.3(Max) mm |
| Package Length | 16.26(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 | |
| Lead Shape | Through Hole |
ON Semiconductor's PNP BDV64BG Darlington transistor is the ideal component to use in situations where a higher current gain is needed. This product's maximum continuous DC collector current is 10 A, while its minimum DC current gain is 1000@5A@4 V. It has a maximum collector emitter saturation voltage of 2@0.02A@5A V. This Darlington transistor array's maximum emitter base voltage is 5 V. Its maximum power dissipation is 125000 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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