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onsemiBD787G通用双极型晶体管
Trans GP BJT NPN 60V 4A 15000mW 3-Pin(3+Tab) TO-225 Box
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 60 | |
| 6 | |
| 2@200mA@2A | |
| 0.4@50mA@500mA|0.6@100mA@1A|0.8@200mA@2A|2.5@800mA@4A | |
| 4 | |
| 40@200mA@3V|25@1A@3V|20@2A@3V|5@4A@4V | |
| 15000 | |
| -65 | |
| 150 | |
| Box | |
| Mounting | Through Hole |
| Package Height | 11.1(Max) |
| Package Width | 3(Max) |
| Package Length | 7.8(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-225 |
| 3 | |
| Lead Shape | Through Hole |
Implement this NPN BD787G GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 15000 mW. This product comes packaged in bulk, so the parts will be stored loosely. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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